 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| JMnic Product Specification Silicon PNP Power Transistors 2SA807 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1618 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -6 -6 -3 50 150 -65~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA IB=0 IC=-3A; IB=-0.3A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V 20 10 MIN -60 TYP. 2SA807 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT MAX UNIT V -1.5 -1.0 -1.0 V mA mA MHz Switching times tr tstg tf Rise time Storage time Fall time VCC=-10V;IC=-3A; RL=3| IB1=-0.3A; IB2=50mA 1.2 1.8 0.3 |I |I |I s s s 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA807 Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
Price & Availability of 2SA807
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |